pnp mj4030 ? mj4031 ? mj4032 29/10/2012 comset semiconductors 1 | 3 m m e e d d i i u u m m p p o o w w e e r r c c o o m m p p l l e e m m e e n n t t a a r r y y s s i i l l i i c c o o n n t t r r a a n n s s i i s s t t o o r r s s they are silicon epitaxial-base pnp power transis tors in monolithic darlington configuration and are mounted in jedec to-3 metal case. they are intented for use as output devices in complementary general purpose amplifier applications. the complementary npn types are the mj4033, mj4034, mj4035 compliance to rohs absolute maximum ratings symbol ratings value unit v cbo collector-base voltage i e =0 mj4030 -60 v mj4031 -80 mj4032 -100 v ceo collector-emittervoltage i b =0 mj4030 -60 v mj4031 -80 mj4032 -100 v ebo emitter-base voltage i c =0 mj4030 -5.0 v mj4031 mj4032 i c collector current -16 a i b base current -0.5 a p t power dissipation @ t c < 25 150 w t j junction temperature 200 c t s storage temperature -65 to +200 thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 1.17 c/w
pnp mj4030 ? mj4031 ? mj4032 29/10/2012 comset semiconductors 2 | 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo collector-emitter voltage (*) i c =-100 ma, i b =0 mj4030 -60 - - v mj4031 -80 - - mj4032 -100 i ceo collector cutoff current v ce =-30 vdc, i b =0 mj4030 - - -3.0 ma v ce =-40 vdc, i b =0 mj4031 - - v ce =-50 v, i b =0 mj4032 - - i ebo emitter cutoff current v be =-5.0 v, i c =0 mj4030 - - -5.0 ma mj4031 mj4032 i cer collector-emitter leakage current v cb =-60 v r be =1.0 k ? mj4030 - - -1.0 ma v cb =-80 v r be =1.0 k ? mj4031 - - v cb =-100 v r be =1.0 k ? mj4032 v cb =-60 v r be =1.0 k ? t c =150c mj4030 - - -5.0 v cb =-80 v r be =1.0 k ? t c =150c mj4031 - - v cb =-100 v r be =1.0 k ? t c =150c mj4032 v ce(sat) collector-emitter saturation voltage (*) i c =-10 a i b =-40 ma mj4030 - - -2.5 v mj4031 mj4032 i c =-16 a i b =-80 ma mj4030 - - -4.0 mj4031 mj4032 v be base-emitter voltage (*) i c =-10 a v ce =-3.0v mj4030 - - -3 v mj4031 mj4032 h fe dc current gain (*) v ce =-10 v i c =-3.0 a mj4030 1000 - - - mj4031 mj4032 (*) pulse width 300 s, duty cycle 2.0%
pnp mj4030 ? mj4031 ? mj4032 29/10/2012 comset semiconductors 3 | 3 mechanical data case to-3 revised september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
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